| PART |
Description |
Maker |
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| NE5531079A-A NE5531079A-T1-A NE5531079A-T1A |
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET LEAD FREE, 79A, 4 PIN
7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
|
Duracell
Renesas Electronics Corporation
|
| UTV005P |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 0.5; Gain (dB): 10; Vcc (V): 20; ICQ (A): 0.22; IMD Type (dB): -60; Case Style: 55FU-2 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
0.5 Watts, 20 Volts, Class A UHF Television - Band IV & V
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| MRF3866R1R2 MSC1312 MRF3866 MRF3866R1 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
From old datasheet system
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
MICROSEMI POWER PRODUCTS GROUP
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| PBR941 934043060215 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
UHF wideband transistor
|
Philips Semiconductors
NXP Semiconductors
|
| MT6C04AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| MT6L58AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| 2SC2643 |
TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA
|
| 2SC3774 |
UHF Low-Noise Amp, Wide-Band Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| BLC6G22-100 BLC6G22LS-100 BLC6G22-130 |
UHF power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
